Growth of Antimony Doped P-type Zinc Oxide Nanowires for Optoelectronics

摘要

In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate (Zn(NO₃)₂), hexamethylenetetramine (HMTA) and polyethylenemine (800 M_w PEI) is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide (NaOH), glycolic acid (C₂H₄O₃) and antimony acetate (Sb(CH₃COO)₃) in water is prepared. The dopant solution and the growth solution combine to generate a resulting solution that includes antimony to zinc in a ratio of between 0.2% molar to 2.0% molar, the resulting solution having a top surface. An ammonia solution is added to the resulting solution. A ZnO seed layer is applied to a substrate and the substrate is placed into the top surface of the resulting solution with the ZnO seed layer facing downwardly for a predetermined time until Sb-doped ZnO nanowires having a length of at least 5 μm have grown from the ZnO seed layer.