METHOD FOR SYNTHESIZING EPITAXIAL P-TYPE ZINC OXIDE THIN FILM GROWTH BY CO-DOPING OF III GROUP ELEMENTS AND NITROGEN

摘要

A method for manufacturing a P-type zinc oxide thin film by co-doping III-group element and nitrogen is provided to improve crystallization and electric performance favorably and to co-dope the III-group element and the nitrogen with stable P-type characteristics. A method for manufacturing a P-type zinc oxide thin film by co-doping III-group element and a nitrogen includes a step of providing a substrate and a zinc oxide target which is coped by the III-group element to an inside of a chamber; a step of providing nitrous oxide gas to the inside of the chamber as sputtering gas; and a step of plating the P-type zinc oxide thin film doped by the III-group element and the nitrogen, on the substrate by contacting the nitrous oxide gas with the zinc oxide target. The substrate is formed by aluminum oxide or silicon. The temperature of the substrate is in a range of 400~700 degrees.