STRESS EFFECT MODEL OPTIMIZATION IN INTEGRATED CIRCUIT SPICE MODEL

摘要

A method and apparatus for stress effect model optimization in IC SPICE model and an IC fabrication method are disclosed. The method for optimizing a stress effect model in an integrated circuit model including obtaining values of at least one layout parameter for a plurality of layout areas in an integrated circuit layout; obtaining values of at least one processing parameter for a plurality of wafer areas corresponding to the layout areas; based on the obtained values of the layout parameter and the obtained values of the process parameter, establishing a function representative of dependency of the process parameter on the layout parameter; and applying the function as a process model parameter to the stress effect model.