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Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation
Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation
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机译:含硅掺杂剂组合物,其系统和使用方法,用于改善硅离子注入过程中的离子束电流和性能
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摘要
A novel composition, system and method thereof for improving beam current during silicon ion implantation are provided. The silicon ion implant process involves utilizing a first silicon-based co-species and a second species. The second species is selected to have an ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions species. The active silicon ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated solely from SiF4.
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