TUNABLE SEMICONDUCTOR LASER DEVICE AND METHOD FOR OPERATING A TUNABLE SEMICONDUCTOR LASER DEVICE

摘要

A tunable semiconductor laser device includes a semiconductor structure, a longitudinal structure provided on the top surface of the semiconductor structure, a first longitudinal interdigitated transducer, wherein the first IDT is arranged on one lateral side of the longitudinal structure and at a distance along the lateral axis from said structure and parallel to the longitudinal structure.