Continuous-tunable single-frequency 2 μm GaSb-based thin device semiconductor disk laser

摘要

The (AlGaIn)(AsSb) materials system has been shown to be ideally suited to realize semiconductor disk laser (SDL) for the 1.9–2.8 μm wavelength range [1-3]. Using barrier pumping with commercial diode lasers, cw output power exceeding 17 W at 20°C heatsink temperature has been shown recently [4]. In order to achieve these high output powers, an intracavity heatspreader is used, which is bonded on top of the SDL-chip. While these high-power SDLs are well suited for medical therapy or material processing, many applications in this wavelength regime, such as high-resolution spectroscopy, long-range gas sensing, LIDAR, seeding of pulsed laser systems and quantum optical experiments, require continuously tunable narrow linewidth, single-frequency emission.