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SEMICONDUCTOR MEMORY INTEGRATED DEVICE HAVING A PRECHARGE CIRCUIT WITH THIN-FILM TRANSISTORS GATED BY A VOLTAGE HIGHER THAN A POWER SUPPLY VOLTAGE
SEMICONDUCTOR MEMORY INTEGRATED DEVICE HAVING A PRECHARGE CIRCUIT WITH THIN-FILM TRANSISTORS GATED BY A VOLTAGE HIGHER THAN A POWER SUPPLY VOLTAGE
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机译:半导体存储器集成设备具有带薄膜晶体管的预充电电路,薄膜晶体管的电压高于电源电压
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摘要
Provided is a semiconductor integrated device including a semiconductor memory circuit and a peripheral circuit of the semiconductor memory circuit. The peripheral circuit includes a first transistor having a first voltage as a breakdown voltage of a gate oxide film. The semiconductor memory circuit includes a pair of bit lines, one of the pair of bit lines being connected to a gate transistor of a memory cell, and a precharge circuit that includes a transistor having a breakdown voltage substantially equal to that of the first transistor, and precharges the pair of bit lines to a predetermined voltage in response to an activation signal. The activation signal of the precharge circuit is a second voltage higher than the first voltage.
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