首页> 外国专利> Semiconductor device comprising an IGBT and a constant voltage circuit having switches and normally-on type MOSFETs connected in parallel

Semiconductor device comprising an IGBT and a constant voltage circuit having switches and normally-on type MOSFETs connected in parallel

机译:包括IGBT和具有并联连接的开关和常开型MOSFET的恒压电路的半导体器件

摘要

A semiconductor device includes an IGBT, a constant voltage circuit, and protection Zener diodes. The IGBT makes/breaks a low-voltage current flowing in a primary coil. The constant voltage circuit and the protection Zener diodes are provided between an external gate terminal and an external collector terminal. The constant voltage circuit supplies a constant gate voltage to the IGBT to thereby set a saturation current value of the IGBT to a predetermined limiting current value. The IGBT has the saturation current value in a limiting current value range of the semiconductor device.
机译:半导体器件包括IGBT,恒压电路和保护齐纳二极管。 IGBT接通/断开在初级线圈中流动的低压电流。恒压电路和保护齐纳二极管设置在外部栅极端子和外部集电极端子之间。恒定电压电路将恒定的栅极电压提供给IGBT,从而将IGBT的饱和电流值设置为预定的极限电流值。 IGBT具有在半导体装置的极限电流值范围内的饱和电流值。

著录项

  • 公开/公告号US8836042B2

    专利类型

  • 公开/公告日2014-09-16

    原文格式PDF

  • 申请/专利权人 KATSUNORI UENO;

    申请/专利号US20090539339

  • 发明设计人 KATSUNORI UENO;

    申请日2009-08-11

  • 分类号H01L27/06;F02P11/02;H03K17/082;H01L29/08;H01L29/06;H01L27/088;F02P3/05;H01L29/739;H03K17/0812;

  • 国家 US

  • 入库时间 2022-08-21 16:05:23

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