N-type Field Effect Transistors, Arrays Comprising N-type Vertically-Oriented Transistors, Methods Of Forming An N-type Field Effect Transistor, And Methods Of Forming An Array Comprising Vertically-Oriented N-type Transistors

摘要

An n-type field effect transistor includes silicon-comprising semiconductor material comprising a pair of source/drain regions having a channel region there-between. At least one of the source/drain regions is conductively doped n-type with at least one of As and P. A conductivity-neutral dopant is in the silicon-comprising semiconductor material in at least one of the channel region and the at least one source/drain region. A gate construction is operatively proximate the channel region. Methods are disclosed.