首页> 外国专利> Capped integrated device with protective cap, composite wafer incorporating integrated devices and process for bonding integrated devices with respective protective caps

Capped integrated device with protective cap, composite wafer incorporating integrated devices and process for bonding integrated devices with respective protective caps

机译:带帽的带保护帽的集成器件,包含集成器件的复合晶圆以及将集成器件与相应保护帽粘合的工艺

摘要

A capped integrated device includes a semiconductor chip, incorporating an integrated device and a protective cap, bonded to the semiconductor chip for protection of the integrated device by means of a bonding layer made of a bonding material. The bonding material forms anchorage elements within recesses, formed in at least one between the semiconductor chip and the protective cap.
机译:封盖的集成器件包括:半导体芯片,其结合有集成器件;以及保护盖,其通过由粘结材料制成的粘结层粘结到半导体芯片,以保护集成器件。结合材料在凹槽内形成锚固元件,该凹槽形成在半导体芯片和保护盖之间的至少一个中。

著录项

  • 公开/公告号US8669141B2

    专利类型

  • 公开/公告日2014-03-11

    原文格式PDF

  • 申请/专利权人 STMICROELECTRONICS S.R.L.;

    申请/专利号US201313797154

  • 发明设计人 ALESSANDRO FREGUGLIA;LUIGI ESPOSITO;

    申请日2013-03-12

  • 分类号H01L21/00;H01L21/3205;

  • 国家 US

  • 入库时间 2022-08-21 16:03:41

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