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LASER DIODES INCLUDING SUBSTRATES HAVING SEMIPOLAR SURFACE PLANE ORIENTATIONS AND NONPOLAR CLEAVED FACETS
LASER DIODES INCLUDING SUBSTRATES HAVING SEMIPOLAR SURFACE PLANE ORIENTATIONS AND NONPOLAR CLEAVED FACETS
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机译:激光二极管,包括具有半球形表面取向和非极性切割面的基底
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摘要
Laser diodes and methods of fabricating laser diodes are disclosed. A laser diode includes a substrate including (Al,In)GaN, an n-side cladding layer including (Al,In)GaN having an n-type conductivity, an n-side waveguide layer including (Al,In)GaN having an n-type conductivity, an active region, a p-side waveguide layer including (Al,In)GaN having a p-type conductivity, a p-side cladding layer including (Al,In)GaN having a p-type conductivity, and a laser cavity formed by cleaved facets. The substrate includes a crystal structure having a surface plane orientation within about 10 degrees of a 20 23 or a 20 23 crystallographic plane orientation. The laser cavity is formed by cleaved facets that have an orientation corresponding to a nonpolar plane of the crystal structure of the substrate.
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