LASER DIODES INCLUDING SUBSTRATES HAVING SEMIPOLAR SURFACE PLANE ORIENTATIONS AND NONPOLAR CLEAVED FACETS

摘要

Laser diodes and methods of fabricating laser diodes are disclosed. A laser diode includes a substrate including (Al,In)GaN, an n side cladding layer including (Al,In)GaN having an n-type conductivity, an n side waveguide layer including (Al,In)GaN having an n-type conductivity, an active region, a p side waveguide layer including (Al,In)GaN having a p-type conductivity, a p side cladding layer including (Al,In)GaN having a p-type conductivity, and a laser cavity formed by cleaved facets, The substrate includes a crystal structure having a surface plane orientation within about 10 degrees of a 2023 or a 2023 crystallographic plane orientation. The laser cavity is formed by cleaved facets that have an orientation corresponding to a nonpolar plane of the crystal structure of the substrate.