BiCMOS gate driver for class-S radio frequency power amplifier

摘要

The invention may be embodied in a resynchronizing, push-pull drive circuit for driving the gate electrodes of a digital Class-S Radio Frequency Power Amplifier (RF-PA). A binary bitstream received from a bitstream generator, such as a sigma-delta modulator, Viterbi-based optimal-bit-pattern modulator sigma-delta, or other suitable modulator, is resynchronized to a low-jitter master clock, then converted to fast-rise, high-swing complementary digital signals to drive the gates of the Class-S RF-PA. The drive circuit provides a high slew-rate, large-swing, quasi-digital gate drive circuit to drive the significant gate capacitance of the RF-PA with sufficient rise times. A combination of bipolar transistor current switches and cascoded CMOS devices is employed to attain requisite performance. For example, the driving circuit is well suited for use with Class-S RF-PAs used in wireless communication systems.