A 2.7-5.5 V, 0.2-1 W BiCMOS RF driver amplifier IC with closed-looppower control and biasing functions

摘要

A 800-900 MHz BiCMOS driver amplifier with 30 dB gain isnintegrated with various functions of a power control loop which includesna peak power detector, an integrator filter, gain control circuitry, andna voltage regulator for biasing a discrete power device. To add to itsnversatility, the IC is pad-programmable to deliver either 0.25 W/0.5nW/1.0 of RF power while maintaining a power added efficiency of 35 ton40% in each case. This has been shown to be useful in creating 1-4 Wnpower amplifier solutions with over 50% efficiency. In closed-loopnconfiguration, this IC provides better than 1 dB of output power controlnover a dynamic range of 25 dB