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Reduction of STI corner defects during SPE in semiconductor device fabrication using DSB substrate and hot technology
Reduction of STI corner defects during SPE in semiconductor device fabrication using DSB substrate and hot technology
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机译:使用DSB衬底和热技术减少半导体器件制造中SPE期间的STI角缺陷
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摘要
A device and method of reducing residual STI corner defects in a hybrid orientation transistor comprising, forming a direct silicon bonded substrate wherein a second silicon layer with a second crystal orientation is bonded to a handle substrate with a first crystal orientation, forming a pad oxide layer on the second silicon layer, forming a nitride layer on the pad oxide layer, forming an isolation trench within the direct silicon bonded substrate through the second silicon layer and into the handle substrate, patterning a PMOS region of the direct silicon bonded substrate utilizing photoresist including a portion of the isolation trench, implanting and amorphizing an NMOS region of the direct silicon bonded substrate, removing the photoresist, performing solid phase epitaxy, performing a recrystallization anneal, forming an STI liner, completing front end processing, and performing back end processing.
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