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Methods for depositing thin films comprising gallium nitride by atomic layer deposition
Methods for depositing thin films comprising gallium nitride by atomic layer deposition
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机译:通过原子层沉积来沉积包含氮化镓的薄膜的方法
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摘要
Atomic layer deposition (ALD) processes for forming thin films comprising GaN are provided. In some embodiments, ALD processes for forming doped GaN thin films are provided. The thin films may find use, for example, in light-emitting diodes.
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