Blank substrates for extreme ultra violet photo masks and methods of fabricating an extreme ultra violet photo mask using the same

摘要

Blank substrates for an extreme ultraviolet (EUV) photo mask are provided. The blank substrate includes a substrate, a reflection layer on the substrate, an absorption layer on the reflection layer opposite to the substrate, and a critical dimension (CD) compensation layer on the absorption layer opposite to the reflection layer. Methods of forming an extreme ultraviolet (EUV) photo mask using the blank substrate are also provided.