Quasi-vertical gated NPN-PNP ESD protection device

摘要

Fashioning a quasi-vertical gated NPN-PNP (QVGNP) electrostatic discharge (ESD) protection device is disclosed. The QVGNP ESD protection device has a well having one conductivity type formed adjacent to a deep well having another conductivity type. The device has a desired holding voltage and a substantially homogenous current flow, and is thus highly robust. The device can be fashioned in a cost effective manner by being formed during a BiCMOS or Smart Power fabrication process.