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Methods of operating DRAM devices having adjustable internal refresh cycles that vary in response to on-chip temperature changes
Methods of operating DRAM devices having adjustable internal refresh cycles that vary in response to on-chip temperature changes
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机译:具有可调整内部刷新周期的DRAM设备的操作方法,这些刷新周期会随片上温度变化而变化
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摘要
An integrated circuit memory device includes a refresh control circuit that generates an internal memory refresh command signal having a period that is changed relative to a period of an external memory refresh command signal received by the memory device. This change in the period of the internal memory refresh command may be in response to detecting a change in temperature of the memory device. In particular, the refresh control circuit is configured so that the period of the internal memory refresh command signal is increased in response to detecting a reduction in temperature of the memory device.
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