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Self-aligned semiconductor ridges in metallic slits as a platform for planar tunable nanoscale resonant photodetectors
Self-aligned semiconductor ridges in metallic slits as a platform for planar tunable nanoscale resonant photodetectors
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机译:金属狭缝中的自对准半导体脊,作为平面可调纳米级共振光电探测器的平台
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摘要
A photodetector having a ridge-in-slit geometry is provided, where a semiconductor ridge is laterally sandwiched in a metallic slit. This assembly is disposed on a layer of semiconducting material, which in turn is disposed on an insulating substrate. These structures can provide efficient resonant detectors having the wavelength of peak response set by the ridge width. Thus a lateral feature defines the wavelength of peak responsivity, as opposed to a vertical feature.
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