首页> 外国专利> Crystallization method of thin film transistor, thin film transistor array panel and manufacturing method for thin film transistor array panel

Crystallization method of thin film transistor, thin film transistor array panel and manufacturing method for thin film transistor array panel

机译:薄膜晶体管的结晶方法,薄膜晶体管阵列面板及薄膜晶体管阵列面板的制造方法

摘要

Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.
机译:本发明的示例性实施方式公开了一种制造薄膜晶体管阵列面板的方法,该薄膜晶体管阵列面板具有减少的总处理时间并提供均匀的结晶。本发明的示例性实施方式还公开了一种薄膜晶体管的结晶方法,包括在基板上形成包括第一像素区域,第二像素区域和第三像素区域的半导体层。结晶方法包括使用微透镜阵列使半导体层的与薄膜晶体管的沟道区相对应的部分结晶。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号