首页>
外国专利>
Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
展开▼
机译:减少SOI结构的器件层中的金属含量的方法以及通过这种方法生产的SOI结构
展开▼
页面导航
摘要
著录项
相似文献
摘要
Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.
展开▼