Methods for forming nickel oxide films for use with resistive switching memory devices/US

摘要

Methods for forming a NiO film on a substrate for use with a resistive switching memory device are presenting including: preparing a nickel ion solution; receiving the substrate, where the substrate includes a bottom electrode, the bottom electrode utilized as a cathode; forming a Ni(OH)₂ film on the substrate, where the forming the Ni(OH)₂ occurs at the cathode; and annealing the Ni(OH)₂ film to form the NiO film, where the NiO film forms a portion of a resistive switching memory element. In some embodiments, methods further include forming a top electrode on the NiO film and before the forming the Ni(OH)₂ film, pre-treating the substrate. In some embodiments, methods are presented where the bottom electrode and the top electrode are a conductive material.