首页> 外国专利> Voltage regulator structure that is operationally stable for both low and high capacitive loads

Voltage regulator structure that is operationally stable for both low and high capacitive loads

机译:电压调节器结构可在低电容负载和高电容负载下稳定运行

摘要

A regulator structure includes a first differential amplifier having a first input coupled to a reference voltage node. A second differential amplifier has a first input coupled to the output of the first differential amplifier. A third differential amplifier has a first input coupled to the output of the first differential amplifier. A first pmos transistor has its gate coupled to the second differential amplifier output, and its drain coupled to a second input of each of the first and second differential amplifiers. A second pmos transistor has its gate coupled to the third differential amplifier output, and its drain configured to output a regulated voltage which is also a second input of the third differential amplifier. A circuit is configured to replicate the regulated voltage and couple the replicated regulated voltage to the drain of the first pmos transistor.
机译:调节器结构包括第一差分放大器,该第一差分放大器具有耦合至参考电压节点的第一输入。第二差分放大器具有耦合到第一差分放大器的输出的第一输入。第三差分放大器具有耦合到第一差分放大器的输出的第一输入。第一pmos晶体管的栅极耦合到第二差分放大器输出,并且其漏极耦合到第一和第二差分放大器中的每一个的第二输入。第二pmos晶体管的栅极耦合到第三差分放大器输出,并且其漏极被配置为输出稳定电压,该稳定电压也是第三差分放大器的第二输入。电路被配置为复制调节的电压,并且将复制的调节的电压耦合到第一pmos晶体管的漏极。

著录项

  • 公开/公告号US8710809B2

    专利类型

  • 公开/公告日2014-04-29

    原文格式PDF

  • 申请/专利权人 RUPESH KHARE;NITIN BANSAL;

    申请/专利号US201113170679

  • 发明设计人 NITIN BANSAL;RUPESH KHARE;

    申请日2011-06-28

  • 分类号G05F1/00;

  • 国家 US

  • 入库时间 2022-08-21 16:00:20

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号