首页>
外国专利>
Methods for pFET fabrication using APM solutions
Methods for pFET fabrication using APM solutions
展开▼
机译:使用APM解决方案制造pFET的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for fabricating an integrated circuit is disclosed that includes, in accordance with an embodiment, providing an integrated circuit comprising a p-type field effect transistor (pFET), recessing a surface region of the pFET using an ammonia-hydrogen peroxide-water (APM) solution to form a recessed pFET surface region, and depositing a silicon-based material channel on the recessed pFET surface region.
展开▼