Test device and test method for resistive random access memory and resistive random access memory device

摘要

According to the embodiments, a first write enable signal that changes with a constant period and a second write enable signal that changes at a time portion in which a limit time between activation/deactivation control of word lines and activation/deactivation control of bit lines is checked are input, a plurality of core control signals in which a time interval with which the core control signals change is locally shorter than a period of the first write enable signal based on the first write enable signal and the second write enable signal that are input is generated, and an operation verification of the resistive random access memory is performed by using the generated core control signals, whereby a cycle time in an arbitrary test cycle is locally and arbitrary adjusted.