Method for determining parameters of charge transfer in semi-insulating materials on the basis of CdTe AND SOLID SOLUTIONS thereof

摘要

A method for determining parameters of charge transfer in semi-insulating materials on the basis of CdTe and solid solutions thereof includes the creation of two ohmic contacts with the semiconductor of known thickness (d) and definition of the product of mobility of free charge carriers (μ) and the time of their lives (τ) - μτ. The current-voltage characteristic of the sample (CVC) is measured, at that the voltage range is selected so that two ranges of CVC were observed – the linear one (I ~ V) and the squared one (I ~ V), and μτ is determined as the result of dividing the crystal thickness square by the voltage transition Vof the linear range of the CVC into the squared and it is calculated by a formula μτ=d/V.