Procedure for the isolation of edge and solar cells for the third stage of a'},{'src':'proceso de integraciu00f3n monolu00edtica','dst':'Monolithic integration process

摘要

Procedure for the isolation of edge and solar cells for the third stage of a Monolithic integration process (P3) of a thin film solar cell by applying a Pulsed infrared laser in picoseconds for the active Face of the cell.Thus Eliminating layers of Semiconductor material P type and N Type layer and the Transparent Conductive oxide (TCO) that are part of the solar cell, leaving the air of the back Contact Barrier Layer without damage, and / or substrate.