The present invention provides a technology which selects, with high levels of quantitativity and reproducibility, a desirable polycrystalline silicon as a raw material for single crystal silicon fabrication, and contributes to stable fabrication of the single crystal silicon. When evaluating a degree of orientation of a crystal of a polycrystalline silicon by x-ray diffraction: an adopted disc-shaped sample (20) is positioned in a location in which Bragg reflection from a mirror index face hkl is detected; an in-plane rotation is carried out at a rotation angle (Φ) with the center of the disc-shaped sample (20) as the center of rotation thereof, such that an x-ray projection region which is defined by a slit Φ scans a primary surface of the disc-shaped sample (20); a chart is derived which denotes a rotation angle (Φ) dependency of the disc-shaped sample (20) of the Bragg reflection intensity from the Miller index face hkl; a baseline is derived from the chart; and a value of an intensity of diffraction of the baseline is employed as an evaluation index of the degree of orientation of the crystal.
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