SiGe STRAIN RELAXED BUFFER FOR HIGH MOBILITY DEVICES AND A METHOD OF FABRICATING IT

摘要

The invention relates to a semiconductor device comprising a semiconductor substrate and having on its top at least a Thin Strain Relaxed Buffer, consisting essentially of a stack of three layers, characterized in that the Thin Strain Relaxed Buffer is not an active part of the semiconductor device and in that said three layers defining the Thin Strain Relaxed Buffer have an essentially constant Ge concentration, said three layers being: - a first epitaxial layer of Si1-xGex, x being the Ge concentration; - a second epitaxial layer of Si1-xGex: C on said first epitaxial layer, the amount of C being at least 0.3 %; - a third epitaxial layer of Si1-xGex on said second layer.