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Low noise amplifier including group III nitride based high electron mobility transistors
Low noise amplifier including group III nitride based high electron mobility transistors
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机译:低噪声放大器,包括基于III族氮化物的高电子迁移率晶体管
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摘要
A low noise amplifier includes a first Group III-nitride based transistor and a second Group III-nitride based transistor coupled to the first Group III-nitride based transistor. The first Group III-nitride based transistor is configured to provide a first stage of amplification to an input signal, and the second Group III-nitride based transistor is configured to provide a second stage of amplification to the input signal.
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