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METHOD FOR PRODUCING LOW Α-EMITTING BISMUTH, LOW Α-EMITTING BISMUTH, AND BISMUTH ALLOY
METHOD FOR PRODUCING LOW Α-EMITTING BISMUTH, LOW Α-EMITTING BISMUTH, AND BISMUTH ALLOY
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机译:生产低排放铋,低排放铋和铋合金的方法
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摘要
Provided is a bismuth characterized in that the bismuth emits 0.01 cph/cm2 or less of α rays. Also provided is a method for producing a low α-emitting bismuth, characterized in that a titanium cathode and a bismuth anode are introduced to a nitric acid solution having a bismuth concentration of 5 to 50 g/L and pH of 0.0 to 0.4, and electrolytic purification is performed at a cathode current density of 0.1 to 1 A/dm2. Recent semiconductor devices are high density and high capacity and therefore are subject to increased risk of soft error due to the effects of α rays emitted from materials in the vicinity of the semiconductor chips. In particular, there is a strong demand for high-purity solder materials used near the semiconductor device, and there is a demand for a low α-emitting material. Therefore, the problem of the present invention is to elucidate the phenomenon of α ray generation by bismuth and to obtain a low α ray-emitting, high-purity bismuth that can be applied to the materials which are demanded, and an alloy thereof.
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机译:提供一种铋,其特征在于,铋放射出0.01cph / cm 2 Sup>以下的α射线。还提供了一种生产低α-发射铋的方法,其特征在于将钛阴极和铋阳极引入到铋浓度为5至50g / L且pH为0.0至0.4的硝酸溶液中,并且电解纯化的阴极电流密度为0.1至1 A / dm 2 Sup>。最近的半导体器件具有高密度和高容量,因此由于从半导体芯片附近的材料发射的α射线的影响而遭受软错误的风险增加。特别地,强烈需要在半导体器件附近使用的高纯度焊料材料,并且需要低α发射材料。因此,本发明的问题是阐明由铋产生α射线的现象,并获得可应用于所需材料及其合金的低α射线发射,高纯度的铋。
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