THIN FILM SURGE ABSORBER, THIN FILM DEVICE, METHOD FOR PRODUCING THIN FILM SURGE ABSORBER, AND METHOD FOR MANUFACTURING THIN FILM DEVICE

摘要

Provided are: a thin film surge absorber which is capable of effectively increasing resistance to static electricity and is capable of improving reliability; a thin film device; a method for producing the thin film surge absorber; and a method for manufacturing the thin film device.A thin film device (1) comprises: a substrate (2); and a conductive layer (3) which is formed on the substrate (2) and is provided with a pair of electrode parts (31a, 31b) that are arranged at a predetermined distance, a pair of discharge electrode parts (32a, 32b) that are arranged so as to face each other with a discharge gap therebetween, and terminal electrode parts (33a, 33b) that are connected to the electrode parts (31a, 31b) and the discharge electrode parts (32a, 32b) via conduction paths (34a, 34b, 35a, 35b). This thin film device (1) is also provided with: a thin film element layer (4) that is connected to the pair of electrode parts (31a, 31b); and a protective insulating layer (5) that covers the thin film element layer (4) and the pair of discharge electrode parts (32a, 32b) and has a hollow part (Ct) which faces at least the discharge gap between the pair of discharge electrode parts (32a, 32b).