首页> 外国专利> SURFACE TREATMENT METHOD FOR SILICON SUBSTRATE, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, PRODUCTION DEVICE FOR SEMICONDUCTORS, TRANSFER MEMBER AND PRODUCTION METHOD THEREFOR, AND SOLAR CELL AND SOLAR CELL PRODUCTION METHOD

SURFACE TREATMENT METHOD FOR SILICON SUBSTRATE, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, PRODUCTION DEVICE FOR SEMICONDUCTORS, TRANSFER MEMBER AND PRODUCTION METHOD THEREFOR, AND SOLAR CELL AND SOLAR CELL PRODUCTION METHOD

机译:硅基板的表面处理方法,半导体装置的制造方法,半导体装置的制造装置,转移元件及其制造方法,太阳能电池和太阳能电池的制造方法

摘要

[Solution] A surface treatment method for a silicon substrate, being one embodiment of the present invention and whereby a second metal having a minute catalytic function is supported on the surface of a transfer member comprising a first metal having a catalytic function, and is brought into contact upon or brought close to the silicon substrate, in a treatment solution capable of oxidizing and dissolving silicon, thereby forming a nanocrystal structural layer on a surface section of the silicon substrate. As a result the reflectivity for a visible light area on the silicon substrate surface is reduced slightly by no more than 2-3% and a solar cell having high photoelectric conversion can be obtained.
机译:[解决方案]作为本发明的一个实施方式的硅基板的表面处理方法,将具有微小催化功能的第二金属负载在包含第一具有催化功能的第一金属的转印部件的表面上。在能够氧化和溶解硅的处理溶液中接触或接近硅衬底,从而在硅衬底的表面部分上形成纳米晶体结构层。结果,对于硅基板表面上的可见光区域的反射率稍微降低了不超过2-3%,并且可以获得具有高光电转换的太阳能电池。

著录项

  • 公开/公告号WO2014142304A1

    专利类型

  • 公开/公告日2014-09-18

    原文格式PDF

  • 申请/专利权人 KOBAYASHI HIKARU;

    申请/专利号WO2014JP56888

  • 发明设计人 IMAMURA KENTARO;

    申请日2014-03-14

  • 分类号H01L21/306;H01L31/0236;

  • 国家 WO

  • 入库时间 2022-08-21 15:47:21

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