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OPTOELECTRONIC GAN-BASED COMPONENT HAVING INCREASED ESD RESISTENCE VIA A SUPERLATTICE AND METHOD FOR THE PRODUCTION THEREOF
OPTOELECTRONIC GAN-BASED COMPONENT HAVING INCREASED ESD RESISTENCE VIA A SUPERLATTICE AND METHOD FOR THE PRODUCTION THEREOF
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机译:通过超晶格增加了ESD电阻的基于光电GAN的组件及其制造方法
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摘要
An optoelectronic component (10) comprises a semiconductor layer structure (100) that has a quantum film structure as an active layer (140) and a p-doped layer (160) that is provided on top of said quantum film structure (140). The p-doped layer (160) comprises at least a first partial layer (161) and a second partial layer (162). The second partial layer (162) has a higher degree of doping (323) than the first partial layer (161).
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