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OPTOELECTRONIC GAN-BASED COMPONENT HAVING INCREASED ESD RESISTANCE VIA A SUPERLATTICE AND METHOD FOR THE PRODUCTION THEREOF
OPTOELECTRONIC GAN-BASED COMPONENT HAVING INCREASED ESD RESISTANCE VIA A SUPERLATTICE AND METHOD FOR THE PRODUCTION THEREOF
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机译:通过超晶格提高了ESD电阻的基于光电GAN的组件及其制造方法
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摘要
An optoelectronic component includes a semiconductor layer structure having a quantum film structure, and a p-doped layer arranged above the quantum film structure, wherein the p-doped layer includes at least one first partial layer and a second partial layer, and the second partial layer has a higher degree of doping than the first partial layer.
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