Process for producing a hybrid semiconductor wafer soi/bulk

摘要

The method involves depositing masking layers (17, 18) on a semiconductor-on-insulator (SOI) layer (3), and forming openings that cross the masking layer, the SOI layer and an insulating layer (2) to reach a single-crystal semiconductor substrate (1). A semiconductor material is grown up to a desired final level without forming spacers by a repeated alternation of selective epitaxy and partial etching steps. Insulating trenches (30) that surround the openings filled with the semiconductor material, are etched while encroaching inwardly over a periphery of the openings.