首页>
外国专利>
METHOD FOR MANUFACTURING HIGH-PURITY ERBIUM, HIGH-PURITY ERBIUM, SPUTTERING TARGET COMPOSED OF HIGH-PURITY ERBIUM, AND METAL GATE FILM HAVING HIGH-PURITY ERBIUM AS MAIN COMPONENT
METHOD FOR MANUFACTURING HIGH-PURITY ERBIUM, HIGH-PURITY ERBIUM, SPUTTERING TARGET COMPOSED OF HIGH-PURITY ERBIUM, AND METAL GATE FILM HAVING HIGH-PURITY ERBIUM AS MAIN COMPONENT
展开▼
机译:制造高纯度E,高纯度E,由高纯度RB组成的溅射靶以及以高纯度E为主要成分的金属栅膜的制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Provided are a method for manufacturing high-purity erbium, wherein crude erbium oxide is mixed with reducing metal, erbium is reduced and distilled by heating the mixture in a vacuum, and the distillate is melted in an inert atmosphere to obtain high-purity erbium; and high-purity erbium, wherein the purity excluding rare-earth elements and gas components is 4N or higher and the oxygen content is 200 wtppm or less. An object of this invention is to provide a method of highly purifying erbium, which has a high vapor pressure and is difficult to be refined in a molten metal state, as well as technology for efficiently and stably providing high-purity erbium obtained with the foregoing method, a sputtering target composed of high-purity erbium, and a metal gate film having high-purity erbium as a main component.
展开▼