METHOD FOR PRODUCING HETEROEPITAXIAL SINGLE CRYSTAL, METHOD FOR MANUFACTURING HETEROJUNCTION SOLAR BATTERY, HETERO EPITAXIAL SINGLE CRYSTAL, HETEROJUNCTION SOLAR BATTERY

摘要

The present invention relates to a method for manufacturing a heteroepitaxial single crystal for reducing the lattice defect among thin film, a method for manufacturing a hetero junction solar battery using the same, a heteroepitaxial single crystal, and a hetero junction solar battery. The present invention relates to a method for manufacturing the heteroepitaxial single crystal for forming an exposure surface (14) where a substrate (10) is exposed at the bottom surface of an opening part (13) by forming the opening part at a mask layer formed at the substrate wherein a silicon crystal (20), which is having a lattice constant different from the substrate, copies the configuration of the exposure surface for growing at the exposure surface. The width dimension of the exposure surface is equal or less than the width dimension of the exposure surface when the breaking strength of the silicon crystal is the same with the stress due to the lack of lattice uniformity received from the substrate by the silicon crystal. [Reference numerals] (10) Substrate; (100) Heteroepitaxial growth No; (106) Installation board; (108) Heater; (12) Mask layer; (13) Opening; (14) Exposure surface; (16) Mask surface; (18) Material gas