NON-SINGLE-CRYSTAL SOLAR BATTERY, MANUFACTURING METHOD THEREOF, AND NON-SINGLE-CRYSTAL SOLAR BATTERY MANUFACTURING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a non-single-crystal solar battery that has better curvilinear factors and conversion efficiency and improved cell characteristics as compared with a boron-doped p-type thin film, and to provide a method for manufacturing the non-single-crystal solar battery in the non-single-crystal solar battery having at least one pin junction in which a p-type semiconductor layer mainly made of silicon or germanium, an essentially intrinsic i-type semiconductor layer 5, and an n-type semiconductor layer 6 are laminated.;SOLUTION: In the non-single-crystal solar battery, at least one p-type semiconductor layer is made of a boron-doped p-type semiconductor layer 3, an i-type semiconductor layer 4 that is as thick as 5 nm or smaller is provided at a pi interface, and the i-type semiconductor layer is exposed to plasma in which gas obtained by performing the hydrogen dilution of a gas material containing gallium as a component is decomposed by high-frequency discharge, thus doping only the side of the pi interface of the p-type semiconductor layer with gallium.;COPYRIGHT: (C)2006,JPO&NCIPI