首页> 外国专利> NONVOLATILE MEMORY DEVICE INCLUDING SUDDEN POWER OFF DETECTION CIRCUIT AND METHOD FOR DETECTING SUDDEN POWER OFF THEREOF

NONVOLATILE MEMORY DEVICE INCLUDING SUDDEN POWER OFF DETECTION CIRCUIT AND METHOD FOR DETECTING SUDDEN POWER OFF THEREOF

机译:包括突然断电检测电路的非易失性存储器及其检测突然断电的方法

摘要

The present invention provides a nonvolatile memory device for detecting sudden power off (SPO) itself. The nonvolatile memory device according to the present invention includes: a memory cell array comprising a plurality of memory cells connected to a plurality of bit lines and a plurality of word lines; a word line decoder to apply word line voltages to the word lines; a bit line selector to select at least one of the bit lines; a control logic to control the word line decoder and the bit line selector so that write data is programmed in the memory cell array; and an SPO detection circuit, wherein the SPO detection circuit comprises: a sensing cell; a first driver to provide a first voltage for the sensing cell; and a second driver to provide a second voltage for the sensing cell, wherein a program state of the sensing cell becomes different depending on an order or a time difference between the first driver and the second driver being powered off.;COPYRIGHT KIPO 2014
机译:本发明提供了一种用于检测突然断电(SPO)本身的非易失性存储装置。根据本发明的非易失性存储器件包括:存储单元阵列,其包括连接到多条位线和多条字线的多个存储单元;字线解码器将字线电压施加到字线;位线选择器,用于选择至少一条位线;控制逻辑,用于控制字线解码器和位线选择器,以便在存储单元阵列中对写入数据进行编程; SPO检测电路,其包括:感测单元;以及第一驱动器,为感测单元提供第一电压;第二驱动器为感测单元提供第二电压,其中感测单元的编程状态根据第一驱动器和第二驱动器断电之间的顺序或时间差而不同。COPYRIGHTKIPO 2014

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