SEMICONDUCTOR LIGHT EMITTING DEVICE COMPRISING SUBSTRATE INCLUDING PATTERN HAVING CONFORMITY WITH CRYSTAL ORIENTATION AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a semiconductor light emitting device and a manufacturing method thereof. According to the present invention, a semiconductor layer is grown to have conformity with a crystal orientation in the direction of a crystal axis according to a crystal structure of a substrate. Therefore, the quality of an epitaxial layer is increased, and an electric potential in the direction of the growth is reduced. The light emitting device of the present invention includes an air gap area where the electric potential in the direction of the growth is reduced, an electric potential is not generated, and an electrical potential is not transmitted. Consequently, the light emitting device may be composed of the semiconductor layer having high quality.;COPYRIGHT KIPO 2014