首页> 外国专利> Polyaniline Doped by Sulfonated Polyphenylsilsesquioxane and Dopants for Positive Temperature Coefficient of Resistance And Menufacturing Method Of The Same

Polyaniline Doped by Sulfonated Polyphenylsilsesquioxane and Dopants for Positive Temperature Coefficient of Resistance And Menufacturing Method Of The Same

机译:磺化聚甲基倍半硅氧烷和掺杂剂掺杂的聚苯胺电阻正温度系数及其制备方法

摘要

The present invention relates to a polyaniline conductor doped with sulfonated polyphenylsilsesquioxane and a dopant to enable having a positive temperature coefficient resistance. When doped in a polyaniline, the sulfonated polyphenylsilsesquioxane allows the doped polyaniline to have high heat resistance and a negative temperature coefficient resistance. It is possible to control the temperature coefficient resistance of a doped polyaniline by simultaneously doping sulfonated polyphenylsilsesquioxane to have a negative temperature coefficient resistance and a dopant to have a positive temperature coefficient resistance.
机译:本发明涉及掺杂有磺化聚苯基倍半硅氧烷和能够具有正温度系数电阻的掺杂剂的聚苯胺导体。当掺杂在聚苯胺中时,磺化的聚苯基倍半硅氧烷使掺杂的聚苯胺具有高的耐热性和负的耐温度系数性。通过同时掺杂具有负温度系数电阻的磺化聚苯基硅倍半氧烷和具有正温度系数电阻的掺杂剂,可以控制掺杂的聚苯胺的温度系数电阻。

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