首页> 外国专利> Memristor-based Memory Circuit for Reading-out the Resistance of Memristor without Resistance Drift Using Capacitors

Memristor-based Memory Circuit for Reading-out the Resistance of Memristor without Resistance Drift Using Capacitors

机译:基于忆阻器的存储电路,用于使用电容器读出忆阻器的电阻而不会出现电阻漂移

摘要

PURPOSE: A memristor-based memory circuit reading a memristor resistance value without a variation of the memristor resistance value by using a capacitor is provided to eliminate the variation of a memristor resistance value by enabling the amount of total charges passing through a memristor in the forward direction to be equal to the amount of total charges passing through the memristor in the backward direction due to capacitor discharge. CONSTITUTION: A second switch (130) is connected with a memristor (M) in series. A third switch (160) is connected with a capacitor (C) in parallel and provides a path to enable a current to be discharged to the ground through the second switch and the memristor when a strong input current pulse for storing a resistance value is applied to the memristor. A differential amplifier (170) measures a voltage across the memristor generated by the current of a current source. A first switch (120) provides a path to enable a current to be discharged to the ground, after the current is stored in the capacitor, through the memristor and then through the second switch in the backward direction compared to the direction when the current was being stored.
机译:目的:提供一种基于忆阻器的存储电路,该电路通过使用电容器读取忆阻器电阻值而无变化,从而通过使正向通过忆阻器的总电荷量消除了忆阻器电阻值的变化方向应等于由于电容器放电而在反向方向通过忆阻器的总电荷量。组成:第二个开关(130)与忆阻器(M)串联连接。第三开关(160)与电容器(C)并联连接,并且当施加用于存储电阻值的强输入电流脉冲时,第三开关(160)提供使电流能够通过第二开关和忆阻器释放到地面的路径。给忆阻器。差分放大器(170)测量由电流源的电流产生的忆阻器两端的电压。在电流被存储在电容器中之后,第一开关(120)提供了使电流能够通过忆阻器,然后通过第二开关以与电流流过的方向相反的方向向地面放电的路径。被存储。

著录项

  • 公开/公告号KR101421153B1

    专利类型

  • 公开/公告日2014-07-22

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20120038970

  • 发明设计人 김형석;

    申请日2012-04-16

  • 分类号G11C13/00;

  • 国家 KR

  • 入库时间 2022-08-21 15:40:25

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