Half-Tone Phase Shift Blankmasks for Haze Reduction

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a halftone phase shift blank mask and a method of manufacturing a photomask, and more particularly, to a halftone phase shifting blank mask capable of reducing growth defects and a method of manufacturing a halftone phase shift photomask therewith. In order to reduce growth defects according to the present invention, a halftone phase shift blank mask has a structure in which a transmittance control film and a phase shift control film are sequentially laminated on a transparent substrate, and a light shielding film, an antireflection film, and a resist are stacked on the transparent control film. In this case, it is possible to control the growth defect according to the sputtering conditions of the deposited thin film, that is, the pressure, the power, the kind of the gas, and the flow rate of the thin film, and also the phase change amount and the transmittance can be controlled by appropriately controlling the transmittance control film and the phase shift control film . By controlling the thin film characteristics of the halftone phase reversal film through the sputtering conditions as described above, it is possible to manufacture a halftone phase inversion blank mask of excellent quality by controlling the sheet resistance and the residual stress.;Halftone phase inversion blank mask, photomask, growth defect, air molecule contamination