FORMATION OF AN IRREVERSIBLE STATE IN A SINGLE-BIT CELL HAVING A FIRST MAGNETIC TUNNEL TRANSITION AND A SECOND MAGNET TUNNEL TRANSITION

摘要

1. A method comprising the steps of: applying programming voltage to a first magnetic tunnel junction (MTP, MTJ) of a single-bit cell without applying programming voltage to the second MTP of a single-bit cell to form an irreversible state in a single-bit cell; and determine the irreversible state by comparing the first value read from the first ICC and received at the first input of the differential amplifier with the second value read from the second ICC and received at the second input of the differential amplifier, the first value corresponding to the first voltage of the first bit bus connected to the first ICC and the second value corresponds to the second voltage of the second discharge bus connected to the second ICC. 2. The method of claim 1, wherein the programming voltage destroys the tunnel oxide of the first ICC, leading to a constant state of low resistance of the first ICC. 3. The method according to claim 1, further comprising the step of supporting the first ICC and the second ICC as complementary cell values. The method of claim 1, wherein the irreversible state corresponds to the molten state of the first ICC. The method according to claim 1, wherein determining the irreversible state of a single-bit cell is performed without a separate reference cell. The method according to claim 1, further comprising the step of applying a recording voltage to the first ICC before applying the programming voltage in order to store the value in a single bit cell. The method of claim 6, further comprising the step of: after applying the recording voltage to the first ICC, the first ICC is read for t