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Substrates and semiconductor components produced with use of a deformation technology with the use of a piezoelectric material and method for the use of such a deformation technology
Substrates and semiconductor components produced with use of a deformation technology with the use of a piezoelectric material and method for the use of such a deformation technology
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机译:通过使用压电材料的变形技术制造的基板和半导体部件以及使用这种变形技术的方法
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摘要
Semiconductor component with:a semiconductor region (204), which comprises a channel region of a field effect transistor and which, by way of a substrate (102) is formed;a contact structure (221, 222), which a connection to the semiconductor region, for one direction (l) of a current flow through the semiconductor region, wherein the direction of current flow along a crystal axis is oriented, which is a & 110 & -axis, a physically equivalent axis or a & 555 & z axis is;a piezoelectric field (203), which extends over the substrate and is coupled mechanically with the semiconductor region, wherein the piezoelectric material in relation to the crystal axis is aligned, so that the generating of an electric field in the direction of the crystal axis to a contraction or expansion in the direction of the crystal axis leads;a first contact (221) to which a first contact area of the piezoelectric area; and is in contacta second contact (222) which, together with a second contact region of the piezoelectric area is in contact, wherein the first and second contact region of the piezoelectric area are arranged in such a way that an electrical field direction in the piezoelectric field is defined to the direction of the current flow through the semiconductor region is aligned.
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