Generating a hydrophobic surface sensitive dielectrics having a small ε of microstructure devices by means of a in-situ plasma treatment

摘要

The method comprising the steps of:Forming a silicon, carbon and oxygen containing dielectric material by means of a substrate of a microstructural element;A first set up in a plasma process environment, which is designed for the inclusion of a plasma;Causing a the action of a first type of radicals, which, in the first plasma can be generated, on a surface region of the silicon, carbon and oxygen containing dielectric material;Establishing a second plasma on the basis of hydrogen and carbon, wherein said second plasma in situ within the same process environment is arranged, in which the first plasma was set up; andCausing the action of a second type of radicals, which in the second plasma can be generated, on the surface area of the silicon, carbon and oxygen containing dielectric material, wherein said second type of free radicals to the formation of methyl groups proceeds in the surface structure of the surface region, wherein the substrate of the microstructural element between the action of the first type of free radicals and the action of the second type of free radicals is subjected to no transport step,characterized byInitiating a dimerization or a polymerization by feeding of one or more chemical means to the surface area, the chemical stability of the surface area in order to increase,wherein the one or more chemical means of silane and / or trimethylsilane, and / or tetramethylsilane and / or tetramethyldisilazane, in combination with one or more functional groups are,wherein the one or more functional groups comprise a vinyl group.