Method for converting semiconductor layers, semiconductor layers produced in this way, and electronic and optoelectronic products comprising such semiconductor layers

摘要

Method for converting amorphous to crystalline semiconductor layers, the conversion being carried out by treating the semiconductor layer with a plasma and by tempering at a temperature between 150 150 ° C and 500 500 ° C, the plasma being provided by a plasma nozzle (1) Plasma source is generated.