Method for manufacturing differential two-colored UV detector used in e.g. gas spectroscopy, involves removing additive absorber layer in first local area, so that first diode region is separated from second diode region

摘要

The method involves forming an additive absorber layer (7) on n-doped semiconductor layer (6). The additive absorber layer in first local area (8) is removed, so that first diode region (8.1) is separated from a second diode region (11). A main absorber layer (12) in an intermediate region (8.2) between first and second diode regions is removed, such that the first local area comprises the first diode region and the intermediate region. The n-doped semiconductor layer is formed as a common n-type semiconductor layer for first and second diode regions. An independent claim is included for UV detector.